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(a) is the result of the heat resistance test of the OPV device developed this time. The red fold line is a tungsten oxide (WOx) element of the HTL, the blue fold line is a MoOx element of the HTL, and the black fold line is an original p-type semiconductor element. (b) is an outline of the element structure.
The Japan Institute of Physical Chemistry announced on September 24, 2015 that it has developed an organic thin-film solar cell (OPV) that has significantly improved heat resistance. The related papers have been published on the online version of Scientific Reports in the journal Nature.
OPV is less durable than silicon-based solar cells, which is one of the reasons why it has not been put to practical use. Although factors such as UV, water, and oxygen, which reduce durability, can be solved by using packaging materials, there is no good treatment for heat resistance. The technology developed this time has greatly improved heat resistance and may become an important step in accelerating the practical application of OPV. The energy conversion efficiency of this trial-produced OPV device is up to 9.0%, which is relatively high in the trial production of the Institute.
This technology has been developed by Ogai et al., a senior researcher in the Molecular Development Research Group of the Institute for the Development of Characteristic Research at the Japan Institute of Physical Chemistry (see the report on this site). The key to improving heat resistance is the use of a newly developed polymer material "PTzNTz (thiophene and thiazolothiazole)" as a p-type semiconductor material.
No deterioration in heat resistance test for 500 hours
Oike et al. used the PTzNTz and n-type semiconducting materials, fullerene inducers, as active layer materials to prototype OPV components. To evaluate its heat resistance, OPV elements were stored in nitrogen at 85 degrees Celsius for 500 hours.
In the same thermal resistance evaluation of OPV components originally using p-type semiconductor materials, the energy efficiency was reduced to about 40% of the initial value, and after 500 hours, the energy efficiency was about 90% of the initial value. Sexually improved. In addition, the material of the hole transport layer (HTL) between the positive electrode and the active layer of the OPV element was changed from molybdenum oxide (MoOx) to tungsten oxide (WOx), and the same test was conducted. As a result, energy efficiency was found. It's 8.3% and it's basically not reduced.
The highest energy conversion efficiency of this OPV device is 9.0%. At this time, the open circuit voltage (VOC) is 0.84V, the short circuit current (JSC) is 16.0 mA, and the fill factor (FF) is 0.67. (Reporter: Nozawa Tetsuo)
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